
PolarHT TM
Power MOSFET
IXTA50N20P
IXTP50N20P
IXTQ50N20P
V DSS
I D25
R DS(on)
=
=
≤
200V
50A
60 m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (I XTA )
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
200
200
± 20
± 30
V
V
V
V
G
TO-220 (I XTP )
S
(TAB)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
50
120
A
A
I A
E AS
T C = 25 ° C
T C = 25 ° C
50
1
A
J
G
D S
(TAB)
dV/dt
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175 ° C
10
V/ns
P D
T J
T JM
T stg
T C = 25 ° C
360
- 55 ... +175
175
- 55 ... +175
W
° C
° C
° C
TO-3P (I XTQ )
T L
T SOLD
M d
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-3P,TO-220)
TO-263
TO-220
TO-3P
300
260
1.13/10
2.5
3.0
5.5
° C
° C
Nm/lb.in.
g
g
g
G
D
S
(TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
200 V
? International standard packages
? Unclamped Inductive Switching (UIS)
rated
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 0.5 ? I D25 , Note 1
T J = 150 ° C
2.5
5.0 V
± 100 nA
25 μ A
250 μ A
60 m Ω
? Low package inductance
- easy to drive and to protect
Advantages
? Easy to mount
? Space savings
? High power density
? 2008 IXYS CORPORATION, All rights reserved
DS99156F(07/08)